The team of our company consists of scientists and engineers working in the field
of nitride semiconductor structures since 1992.

New publications:
M.Mynbaeva et al. Self-organized defect control during GaN homoepitaxial growth on nanostructured substrates. Phys. Status Solidi C 10, No. 3, 366-368 (2013) / DOI 10.1002/pssc.201200448 
V.Nikolaev et al. Effect of nano-column properties on self-separation of thick GaN layers
grown by HVPE Phys. Status Solidi C, 1-3 (2014) / DOI 10.1002/pssc.201300432
V.N. Maslov et al. beta-Ga2O3 Crystal Growing from Its Own. Technical Physics Letters, 2014, Vol. 40, No. 4, pp. 303-305.