The company “Perfect Crystals LLC” was founded in May, 2011, with the goal of creation and development of manufacturing technology of substrate crystals and structures for modern electronic and the opto-electronic devices in UV and visible range. Our company is the developer of technological processes in the field of growth of wide band gap semiconductor crystals and structures on the basis of GaN, AlN, InN, SiC, beta-Ga2O3 etc.